A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator

  1. Balaguer, M.
  2. Roldán, J.B.
  3. Tienda-Luna, I.M.
  4. Ruiz, F.G.
  5. Godoy, A.
  6. Gámiz, F.
  7. Sampedro, C.
Konferenzberichte:
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

ISBN: 9781424428397

Datum der Publikation: 2009

Seiten: 104-107

Art: Konferenz-Beitrag

DOI: 10.1109/SCED.2009.4800441 GOOGLE SCHOLAR
Datenquelle: Scopus