A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator

  1. Balaguer, M.
  2. Roldán, J.B.
  3. Tienda-Luna, I.M.
  4. Ruiz, F.G.
  5. Godoy, A.
  6. Gámiz, F.
  7. Sampedro, C.
Actes de conférence:
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

ISBN: 9781424428397

Année de publication: 2009

Pages: 104-107

Type: Communication dans un congrès

DOI: 10.1109/SCED.2009.4800441 GOOGLE SCHOLAR
La source de données: Scopus