Coulomb scattering in high- κ gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors

  1. Jiḿnez-Molinos, F.
  2. Gámiz, F.
  3. Donetti, L.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2008

Volumen: 104

Número: 6

Type: Article

DOI: 10.1063/1.2975993 GOOGLE SCHOLAR

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