Evidence for mobility enhancement in double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors

  1. Rodriguez, N.
  2. Cristoloveanu, S.
  3. Gámiz, F.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2007

Volume: 102

Issue: 8

Type: Article

DOI: 10.1063/1.2800194 GOOGLE SCHOLAR