Evidence for mobility enhancement in double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
- Rodriguez, N.
- Cristoloveanu, S.
- Gámiz, F.
Aldizkaria:
Journal of Applied Physics
ISSN: 0021-8979
Argitalpen urtea: 2007
Alea: 102
Zenbakia: 8
Mota: Artikulua