Electron mobility and magneto transport study of ultra-thin channel double-gate Si MOSFETs

  1. Prunnila, M.
  2. Ahopelto, J.
  3. Gamiz, F.
Revue:
Solid-State Electronics

ISSN: 0038-1101

Année de publication: 2005

Volumen: 49

Número: 9 SPEC. ISS.

Pages: 1516-1521

Type: Communication dans un congrès

DOI: 10.1016/J.SSE.2005.07.016 GOOGLE SCHOLAR
La source de données: Scopus