Gate bias symmetry dependency of electron mobility and prospect of velocity modulation in double-gate silicon-on-insulator transistors

  1. Prunnila, M.
  2. Ahopelto, J.
  3. Henttinen, K.
  4. Gamiz, F.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2004

Volumen: 85

Número: 22

Pages: 5442-5444

Type: Article

DOI: 10.1063/1.1829384 GOOGLE SCHOLAR
La source de données: Scopus