Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates

  1. Gámiz, F.
  2. Cartujo-Cassinello, P.
  3. Roldán, J.B.
  4. Jiménez-Molinos, F.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2002

Volumen: 92

Número: 1

Pages: 288-295

Type: Article

DOI: 10.1063/1.1481962 GOOGLE SCHOLAR
La source de données: Scopus