Electron mobility in quantized β-SiC inversion layers

  1. Gámiz, F.
  2. Roldán, J.B.
  3. López-Villanueva, J.A.
  4. Cartujo, P.
Revue:
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

ISSN: 1071-1023

Année de publication: 1998

Volumen: 16

Número: 3

Pages: 1631-1633

Type: Article

DOI: 10.1116/1.589951 GOOGLE SCHOLAR
La source de données: Scopus