A compact quantum model for fin-shaped field effect transistors valid from dc to high frequency and noise simulations
- Lázaro, A.
- Nae, B.
- Iñiguez, B.
- Garcia, F.
- Tienda-Luna, I.M.
- Godoy, A.
Revista:
Journal of Applied Physics
ISSN: 0021-8979
Any de publicació: 2008
Volum: 103
Número: 8
Tipus: Article