A compact quantum model for fin-shaped field effect transistors valid from dc to high frequency and noise simulations
- Lázaro, A.
- Nae, B.
- Iñiguez, B.
- Garcia, F.
- Tienda-Luna, I.M.
- Godoy, A.
Revue:
Journal of Applied Physics
ISSN: 0021-8979
Année de publication: 2008
Volumen: 103
Número: 8
Type: Article