A low-frequency noise model for four-gate field-effect transistors

  1. Tejada, J.A.J.
  2. Rodríguez, A.L.
  3. Godoy, A.
  4. Villanueva, J.A.L.
  5. Gómez-Campos, F.M.
  6. Rodríguez-Bolívar, S.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2008

Volume: 55

Issue: 3

Pages: 896-903

Type: Article

DOI: 10.1109/TED.2007.914473 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus