Dependence of generation-recombination noise with gate voltage in FD SOI MOSFETs

  1. Luque Rodríguez, A.
  2. Jiménez Tejada, J.A.
  3. Rodríguez-Bolívar, S.
  4. Mendes Almeida, L.
  5. Aoulaiche, M.
  6. Claeys, C.
  7. Simoen, E.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2012

Volume: 59

Issue: 10

Pages: 2780-2786

Type: Article

DOI: 10.1109/TED.2012.2208970 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus