Does carrier velocity saturation help to enhance: F maxin graphene field-effect transistors?

  1. Feijoo, P.C.
  2. Pasadas, F.
  3. Bonmann, M.
  4. Asad, M.
  5. Yang, X.
  6. Generalov, A.
  7. Vorobiev, A.
  8. Banszerus, L.
  9. Stampfer, C.
  10. Otto, M.
  11. Neumaier, D.
  12. Stake, J.
  13. Jiménez, D.
Revue:
Nanoscale Advances

ISSN: 2516-0230

Année de publication: 2020

Volumen: 2

Número: 9

Pages: 4179-4186

Type: Article

DOI: 10.1039/C9NA00733D GOOGLE SCHOLAR lock_openAccès ouvert editor
La source de données: Scopus