Publicaciones en las que colabora con JUAN BAUTISTA ROLDÁN ARANDA (13)

2024

  1. Non-uniform WENO-based quasi-interpolating splines from the Bernstein–Bézier representation and applications

    Mathematics and Computers in Simulation, Vol. 223, pp. 158-170

2022

  1. Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective

    Microelectronic Engineering, Vol. 257

2021

  1. BCC-Grid versus SC-Grid in the modeling of a sheet of graphene as a surface boundary condition in the context of ADE-FDTD

    Mathematics and Computers in Simulation, Vol. 186, pp. 52-61

  2. Non-uniform spline quasi-interpolation to extract the series resistance in resistive switching memristors for compact modeling purposes

    Mathematics, Vol. 9, Núm. 17

2019

  1. A spline quasi-interpolation based method to obtain the reset voltage in Resistive RAMs in the charge-flux domain

    Journal of Computational and Applied Mathematics, Vol. 354, pp. 326-333

  2. Estimation of the reset voltage in resistive RAMs using the charge–flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials

    Mathematics and Computers in Simulation, Vol. 164, pp. 120-130

2018

  1. Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

    Journal of Applied Physics, Vol. 123, Núm. 1

2017

  1. Polynomial pattern finding in scattered data

    Journal of Computational and Applied Mathematics, Vol. 318, pp. 107-116

2016

  1. A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs

    Solid-State Electronics, Vol. 118, pp. 56-60

2015

  1. An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors

    Mathematics and Computers in Simulation, Vol. 118, pp. 248-257

2014

  1. A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines

    Mathematics and Computers in Simulation, Vol. 102, pp. 1-10

2011

  1. An inversion-charge analytical model for square gate-all-around MOSFETs

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 9, pp. 2854-2861

2010

  1. An analytical model for square GAA MOSFETs including quantum effects

    Solid-State Electronics, Vol. 54, Núm. 11, pp. 1463-1469