Publicaciones en las que colabora con CARLOS SAMPEDRO MATARÍN (10)

2011

  1. Analytical drain current model reproducing advanced transport models in nanoscale double-gate (DG) MOSFETs

    2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011

  2. Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs

    Semiconductor Science and Technology, Vol. 26, Núm. 9

  3. Ultrathin n-Channel and p-Channel SOI MOSFETs

    Engineering Materials (Springer Science and Business Media B.V.), pp. 169-185

2010

  1. An analytical I-V model for surrounding-gate transistors that includes quantum and velocity overshoot effects

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 11, pp. 2925-2933

2009

  1. A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Monte Carlo simulation of nanoelectronic devices

    Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 174-191

2007

  1. Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices

    Journal of Computational Electronics, Vol. 6, Núm. 1-3, pp. 41-44

2005

  1. Electron transport in silicon inversion slabs of nanometric thickness

    Proceedings of SPIE - The International Society for Optical Engineering

  2. Influence of confined acoustic phonons on the electron mobility in ultrathin silicon-on-insulator layers

    Proceedings - Electrochemical Society

  3. Monte Carlo simulation of velocity modulation transistors

    2005 Spanish Conference on Electron Devices, Proceedings