GRUPO DE INVESTIGACIÓN EN NANOELECTRÓNICA
NRG
Centre National de la Recherche Scientifique
París, FranciaPublicaciones en colaboración con investigadores/as de Centre National de la Recherche Scientifique (6)
2019
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Capacitorless memory devices using virtual junctions
2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)
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Temperature and Gate Leakage Influence on the Z(2)-FET Memory Operation
49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019)
2017
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Gate-induced vs. implanted body doping impact on Z(2)-FET DC operation
2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)
2010
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Conductance of functionalized nanotubes, graphene and nanowires: From ab initio to mesoscopic physics
Physica Status Solidi (B) Basic Research, Vol. 247, Núm. 11-12, pp. 2962-2967
2009
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Anomalous doping effects on charge transport in graphene nanoribbons
Physical Review Letters, Vol. 102, Núm. 9
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Chemically induced mobility gaps in graphene nanoribbons: A route for upscaling device performances
Nano Letters, Vol. 9, Núm. 7, pp. 2725-2729