GRUPO DE INVESTIGACIÓN EN NANOELECTRÓNICA
NRG
Grenoble Institute of Technology
Grenoble, FranciaPublicaciones en colaboración con investigadores/as de Grenoble Institute of Technology (7)
2019
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Capacitorless memory devices using virtual junctions
2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)
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Temperature and Gate Leakage Influence on the Z(2)-FET Memory Operation
49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019)
2017
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Gate-induced vs. implanted body doping impact on Z(2)-FET DC operation
2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)
2014
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A2RAM: Low-power 1T-DRAM memory cells compatible with planar and 3D SOI substrates
2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
2009
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A-RAM: Novel capacitor-less DRAM memory
2009 IEEE INTERNATIONAL SOI CONFERENCE
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CHARACTERIZATION, MODELLING AND SIMULATION OF SUB-45NM SOI DEVICES
CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS
2007
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Ballisticity at very low drain bias in DG SOI nano-MOSFETs
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2