Publicaciones en las que colabora con PEDRO CARTUJO ESTÉBANEZ (4)

1995

  1. Universality of electron mobility curves in MOSFETs: a Monte Carlo study

    IEEE Transactions on Electron Devices, Vol. 42, Núm. 2, pp. 258-265

1993

  1. Accurate determination of majority thermal-capture cross sections of deep impurities in p-n junctions

    Journal of Applied Physics, Vol. 74, Núm. 4, pp. 2605-2612

  2. An analytical expression for phonon-limited electron mobility in silicon-inversion layers

    Journal of Applied Physics, Vol. 74, Núm. 5, pp. 3289-3292

  3. Influence of the interface-state density on the electron mobility in silicon inversion layers

    Journal of Electronic Materials, Vol. 22, Núm. 9, pp. 1159-1163