Publicaciones en colaboración con investigadores/as de École Polytechnique Fédérale de Lausanne (5)

2018

  1. Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 10, pp. 4679-4686

  2. Impact of electron effective mass variation on the performance of InAs/GaSb Electron-Hole Bilayer Tunneling Field-Effect Transistor

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

2015

  1. Role of the gate in ballistic nanowire SOI MOSFETs

    Solid-State Electronics, Vol. 112, pp. 24-28

2014

  1. Modeling the channel charge and potential in quasi-ballistic nanoscale double-gate MOSFETs

    IEEE Transactions on Electron Devices, Vol. 61, Núm. 8, pp. 2640-2646