Publicaciones en colaboración con investigadores/as de University of Glasgow (21)

2021

  1. Self-consistent enhanced s/d tunneling implementation in a 2d ms-emc nanodevice simulator

    Micromachines, Vol. 12, Núm. 6

2020

  1. Efficient Implementation of S/D tunneling in 2D MS-EMC of Nanoelectronic Devices including the Thickness Dependent Effective Mass

    2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020

  2. Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

  3. Quantum enhancement of a s/d tunneling model in a 2d ms-emc nanodevice simulator: NEGF comparison and impact of effective mass variation

    Micromachines, Vol. 11, Núm. 2

  4. Techniques for Statistical Enhancement in a 2D Multi-subband Ensemble Monte Carlo Nanodevice Simulator

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

2019

  1. Impact of effective mass on transport properties and direct source-to-drain tunneling in ultrascaled double gate devices: A 2D multi-subband ensemble monte carlo study

    2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019

  2. Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

  3. Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 3, pp. 1145-1152

2018

  1. Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 10, pp. 4679-4686

  2. Impact of Strain on S/D tunneling in FinFETs: A MS-EMC study

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study

    2018 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2018)

  4. MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  5. Source-to-drain tunneling analysis in FDSOI, DGSOI, and FinFET devices by means of multisubband ensemble Monte Carlo

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 11, pp. 4740-4746

2017

  1. Assessment of Gate Leakage Mechanism utilizing Multi-Subband Ensemble Monte Carlo

    2017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017)

  2. Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

    Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

  3. Multi-Subband Ensemble Monte Carlo Study of Tunneling Leakage Mechanisms

    2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)

  4. Multi-subband ensemble Monte Carlo study of tunneling leakage mechanisms

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2015

  1. Multi-Subband Ensemble Monte Carlo Simulation of Si Nanowire MOSFETs

    2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)

  2. Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2014

  1. 3D Multi-Subband Ensemble Monte Carlo Simulator of FinFETs and Nanowire Transistors

    2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)