Publicaciones en las que colabora con JUAN ANTONIO JIMÉNEZ TEJADA (7)

2001

  1. A simple subthreshold swing model for short channel MOSFETs

    Solid-State Electronics, Vol. 45, Núm. 3, pp. 391-397

1997

  1. Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs

    Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

  2. Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors

    Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4621-4628

  3. Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors

    Applied Physics Letters, Vol. 70, Núm. 16, pp. 2153-2155

1995

  1. A model for the quantized accumulation layer in metal-insulator-semiconductor structures

    Solid State Electronics, Vol. 38, Núm. 1, pp. 203-210

1994

  1. A comprehensive model for Coulomb scattering in inversion layers

    Journal of Applied Physics, Vol. 75, Núm. 2, pp. 924-934

  2. Density of states of a two-dimensional electron gas including nonparabolicity

    Journal of Applied Physics, Vol. 75, Núm. 8, pp. 4267-4269