FRANCISCO JESÚS
GÁMIZ PÉREZ
CATEDRÁTICO DE UNIVERSIDAD
A.
Asenov
Publicacións nas que colabora con A. Asenov (22)
2021
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Self-consistent enhanced s/d tunneling implementation in a 2d ms-emc nanodevice simulator
Micromachines, Vol. 12, Núm. 6
2020
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Efficient Implementation of S/D tunneling in 2D MS-EMC of Nanoelectronic Devices including the Thickness Dependent Effective Mass
2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020
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Quantum enhancement of a s/d tunneling model in a 2d ms-emc nanodevice simulator: NEGF comparison and impact of effective mass variation
Micromachines, Vol. 11, Núm. 2
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Techniques for Statistical Enhancement in a 2D Multi-subband Ensemble Monte Carlo Nanodevice Simulator
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
2019
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Impact of effective mass on transport properties and direct source-to-drain tunneling in ultrascaled double gate devices: A 2D multi-subband ensemble monte carlo study
2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019
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Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
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Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices
IEEE Transactions on Electron Devices, Vol. 66, Núm. 3, pp. 1145-1152
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Thorough Understanding of Retention Time of Z2FET Memory Operation
IEEE Transactions on Electron Devices, Vol. 66, Núm. 1, pp. 383-388
2018
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A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
Solid-State Electronics, Vol. 143, pp. 10-19
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Impact of Strain on S/D tunneling in FinFETs: A MS-EMC study
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
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Simulation study on Z2FET scalability, process optimization and their impact on performance
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
2017
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2D-TCAD simulation on retention time of Z2FET for DRAM application
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo
Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
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Extended Analysis of the Z2-FET: Operation as Capacitorless eDRAM
IEEE Transactions on Electron Devices, Vol. 64, Núm. 11, pp. 4486-4491
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Low-power Z2-FET capacitorless 1T-DRAM
2017 IEEE 9th International Memory Workshop, IMW 2017
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Multi-subband ensemble Monte Carlo study of tunneling leakage mechanisms
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Simulation based DC and dynamic behaviour characterization of Z2FET
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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The mystery of the Z2-FET 1T-DRAM memory
Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
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Z2-FET as Capacitor-Less eDRAM Cell for High-Density Integration
IEEE Transactions on Electron Devices, Vol. 64, Núm. 12, pp. 4904-4909