Publicaciones en colaboración con investigadores/as de Soochow University (3)

2020

  1. Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

    IEEE International Reliability Physics Symposium Proceedings

  2. Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages

    IEEE International Reliability Physics Symposium Proceedings

2017

  1. SIM2RRAM : a physical model for RRAM devices simulation

    Journal of Computational Electronics, Vol. 16, Núm. 4, pp. 1095-1120