Publikationen, an denen er mitarbeitet CARLOS SAMPEDRO MATARÍN (8)

2010

  1. An analytical I-V model for surrounding-gate transistors that includes quantum and velocity overshoot effects

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 11, pp. 2925-2933

2009

  1. A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Monte Carlo simulation of nanoelectronic devices

    Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 174-191

2005

  1. Electron transport in silicon inversion slabs of nanometric thickness

    Proceedings of SPIE - The International Society for Optical Engineering

  2. Influence of confined acoustic phonons on the electron mobility in ultrathin silicon-on-insulator layers

    Proceedings - Electrochemical Society

  3. Monte Carlo simulation of velocity modulation transistors

    2005 Spanish Conference on Electron Devices, Proceedings