JUAN BAUTISTA
ROLDÁN ARANDA
CATEDRÁTICO DE UNIVERSIDAD
Universitat de Barcelona
Barcelona, EspañaUniversitat de Barcelona-ko ikertzaileekin lankidetzan egindako argitalpenak (7)
2024
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High-Temporal-Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h-BN Memristors
Advanced Functional Materials, Vol. 34, Núm. 15
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Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors
ACS Applied Electronic Materials, Vol. 6, Núm. 2, pp. 1424-1433
2023
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Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient
ACS Applied Materials and Interfaces, Vol. 15, Núm. 15, pp. 19102-19110
2022
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Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller
Nanoscale, Vol. 15, Núm. 5, pp. 2171-2180
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Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching
Advanced Electronic Materials, Vol. 8, Núm. 8
2021
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Advanced Data Encryption using 2D Materials
Advanced Materials, Vol. 33, Núm. 27
1998
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Monte Carlo simulation of a submicron MOSFET including inversion layer quantization
VLSI Design, Vol. 6, Núm. 1-4, pp. 287-290