Instituto Nacional de Astrofísica, Óptica y Electrónica-ko ikertzaileekin lankidetzan egindako argitalpenak (4)

2023

  1. Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 11, pp. 5977-5982

2020

  1. Systematic characterization of random telegraph noise and its dependence with magnetic fields in MOSFET devices

    Noise in Nanoscale Semiconductor Devices (Springer International Publishing), pp. 135-174

2018

  1. Experimental characterization of the random telegraph noise signature in MOSFETs under the Influence of Magnetic Fields

    IEEE Electron Device Letters, Vol. 39, Núm. 7, pp. 1054-1057

2016

  1. Device physics, modeling, and technology for nano-scaled semiconductor devices

    Nano-Scaled Semiconductor Devices: Physics, Modelling, Characterisation, and Societal Impact (Institution of Engineering and Technology), pp. 17-185