Vienna University of Technology-ko ikertzaileekin lankidetzan egindako argitalpenak (10)

2021

  1. A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 6, pp. 3096-3103

2019

  1. Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism

    IEEE Electron Device Letters, Vol. 40, Núm. 10, pp. 1571-1574

2018

  1. Impact of the Effective Mass on the Mobility in Si Nanowire Transistors

    2018 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2018)

  2. Impact of the Effective Mass on the Mobility in Si Nanowire Transistors

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

2016

  1. Device physics, modeling, and technology for nano-scaled semiconductor devices

    Nano-Scaled Semiconductor Devices: Physics, Modelling, Characterisation, and Societal Impact (Institution of Engineering and Technology), pp. 17-185

  2. Measurements of the Higgs boson production and decay rates and constraints on its couplings from a combined ATLAS and CMS analysis of the LHC pp collision data at √s = 7 and 8 TeV

    Journal of High Energy Physics, Vol. 2016, Núm. 8

2015

  1. A Space weather information service based upon remote and in-situ measurements of coronal mass ejections heading for Earth: A concept mission consisting of six spacecraft in a heliocentric orbit at 0.72 AU

    Journal of Space Weather and Space Climate, Vol. 5

  2. Combined Measurement of the Higgs Boson Mass in pp Collisions at s =7 and 8 TeV with the ATLAS and CMS Experiments

    Physical Review Letters, Vol. 114, Núm. 19

2001

  1. Improving strained-Si on Si 1-xGe x deep submicron MOSFETs performance by means of a stepped doping profile

    IEEE Transactions on Electron Devices, Vol. 48, Núm. 9, pp. 1878-1884