Departamento
ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
Artículos (12) Publicaciones en las que ha participado algún/a investigador/a
2000
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A RNS-based matrix-vector-multiply FCT architecture for DCT computation
Midwest Symposium on Circuits and Systems, Vol. 1, pp. 350-353
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A new RNS architecture for the computation of the scaled 2D-DCT on field-programmable logic
Conference Record of the Asilomar Conference on Signals, Systems and Computers, Vol. 1, pp. 379-383
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Cerradura inteligente para puerta: un avanzado sistema para control de accesos
Elektor: revista internacional de electrónica y ordenadores, Núm. 242, pp. 6-14
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Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects
IEEE Electron Device Letters, Vol. 21, Núm. 5, pp. 239-241
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Effects of the inversion-layer centroid on the performance of double-gate MOSFET's
IEEE Transactions on Electron Devices, Vol. 47, Núm. 1, pp. 141-146
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Effects of the inversionlayer centroid on the performance of doublegate MOSFET's
IEEE Transactions on Electron Devices, Vol. 47, Núm. 1, pp. 141146
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Fast RNS-based 2D-DCT computation on field-programmable devices
IEEE Workshop on Signal Processing Systems, SiPS: Design and Implementation, pp. 365-373
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Influence of technological parameters on the behavior of the hole effective mass in SiGe structures
Journal of Applied Physics, Vol. 88, Núm. 4, pp. 1978-1982
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Optimum design in a JFET for minimum generation-recombination noise
Microelectronics Reliability, Vol. 40, Núm. 11, pp. 1965-1968
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RNS-FPL merged architectures for orthogonal DWT
Electronics Letters, Vol. 36, Núm. 14, pp. 1198-1199
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Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects
Semiconductor Science and Technology, Vol. 15, Núm. 2, pp. 85-90
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The escape time of electrons from localised states
Physica Status Solidi (B) Basic Research, Vol. 218, Núm. 1, pp. 299-302