Artículos (12) Publicaciones en las que ha participado algún/a investigador/a

2000

  1. A RNS-based matrix-vector-multiply FCT architecture for DCT computation

    Midwest Symposium on Circuits and Systems, Vol. 1, pp. 350-353

  2. A new RNS architecture for the computation of the scaled 2D-DCT on field-programmable logic

    Conference Record of the Asilomar Conference on Signals, Systems and Computers, Vol. 1, pp. 379-383

  3. Cerradura inteligente para puerta: un avanzado sistema para control de accesos

    Elektor: revista internacional de electrónica y ordenadores, Núm. 242, pp. 6-14

  4. Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

    IEEE Electron Device Letters, Vol. 21, Núm. 5, pp. 239-241

  5. Effects of the inversion-layer centroid on the performance of double-gate MOSFET's

    IEEE Transactions on Electron Devices, Vol. 47, Núm. 1, pp. 141-146

  6. Effects of the inversionlayer centroid on the performance of doublegate MOSFET's

    IEEE Transactions on Electron Devices, Vol. 47, Núm. 1, pp. 141146

  7. Fast RNS-based 2D-DCT computation on field-programmable devices

    IEEE Workshop on Signal Processing Systems, SiPS: Design and Implementation, pp. 365-373

  8. Influence of technological parameters on the behavior of the hole effective mass in SiGe structures

    Journal of Applied Physics, Vol. 88, Núm. 4, pp. 1978-1982

  9. Optimum design in a JFET for minimum generation-recombination noise

    Microelectronics Reliability, Vol. 40, Núm. 11, pp. 1965-1968

  10. RNS-FPL merged architectures for orthogonal DWT

    Electronics Letters, Vol. 36, Núm. 14, pp. 1198-1199

  11. Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects

    Semiconductor Science and Technology, Vol. 15, Núm. 2, pp. 85-90

  12. The escape time of electrons from localised states

    Physica Status Solidi (B) Basic Research, Vol. 218, Núm. 1, pp. 299-302