Publicaciones (103) Publicaciones en las que ha participado algún/a investigador/a

2011

  1. A search for new physics in dijet mass and angular distributions in ppcollisions at √s=7 TeV measured with the ATLAS detector

    New Journal of Physics, Vol. 13

  2. An analytical compact model for Schottky-barrier double gate MOSFETs

    Solid-State Electronics, Vol. 64, Núm. 1, pp. 78-84

  3. An inversion-charge analytical model for square gate-all-around MOSFETs

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 9, pp. 2854-2861

  4. Charged particle multiplicities in pp interactions at √s = 0.9, 2.36, and 7TeV

    Journal of High Energy Physics, Vol. 2011, Núm. 1

  5. Charged-particle multiplicities in ppinteractions measured with the ATLAS detector at the LHC

    New Journal of Physics, Vol. 13

  6. Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs

    Semiconductor Science and Technology, Vol. 26, Núm. 9

  7. Compact optical instrument for simultaneous determination of oxygen and carbon dioxide

    Microchimica Acta, Vol. 172, Núm. 3-4, pp. 455-464

  8. Conductance and application of organic molecule pairs as nanofuses

    Physical Review B - Condensed Matter and Materials Physics, Vol. 83, Núm. 12

  9. Contact effects in compact models of organic thin film transistors: Application to zinc phthalocyanine-based transistors

    Organic Electronics, Vol. 12, Núm. 5, pp. 832-842

  10. Dijet azimuthal decorrelations in pp collisions at √s=7TeV

    Physical Review Letters, Vol. 106, Núm. 12

  11. First measurement of hadronic event shapes in pp collisions at s=7 TeV

    Physics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics, Vol. 699, Núm. 1-2, pp. 48-67

  12. First measurement of the cross section for top-quark pair production in proton-proton collisions at √s=7 TeV

    Physics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics, Vol. 695, Núm. 5, pp. 424-443

  13. Flexible ECG acquisition system based on analog and digital reconfigurable devices

    Sensors and Actuators, A: Physical, Vol. 165, Núm. 2, pp. 261-270

  14. High doping density/high electric field, stress and heterojunction effects on the characteristics of CMOS compatible p-n junctions

    Journal of the Electrochemical Society, Vol. 158, Núm. 5

  15. Hole effective mass in silicon inversion layers with different substrate orientations and channel directions

    Journal of Applied Physics, Vol. 110, Núm. 6

  16. Impact of Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 8, pp. 2362-2370

  17. Impact of the fringing capacitance at the back of thin-film transistors

    Organic Electronics, Vol. 12, Núm. 6, pp. 936-949

  18. In-depth study of quantum effects in SOI DGMOSFETs for different crystallographic orientations

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 12, pp. 4438-4441

  19. Inclusive b-hadron production cross section with muons in pp collisions at √s = 7 TeV

    Journal of High Energy Physics, Vol. 2011, Núm. 3

  20. Inclusive search for same-sign dilepton signatures in pp collisions at √s = 7 TeV with the ATLAS detector

    Journal of High Energy Physics, Vol. 2011, Núm. 10, pp. 1-47