Departamento
ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
Publicaciones (103) Publicaciones en las que ha participado algún/a investigador/a
2011
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A search for new physics in dijet mass and angular distributions in ppcollisions at √s=7 TeV measured with the ATLAS detector
New Journal of Physics, Vol. 13
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An analytical compact model for Schottky-barrier double gate MOSFETs
Solid-State Electronics, Vol. 64, Núm. 1, pp. 78-84
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An inversion-charge analytical model for square gate-all-around MOSFETs
IEEE Transactions on Electron Devices, Vol. 58, Núm. 9, pp. 2854-2861
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Charged particle multiplicities in pp interactions at √s = 0.9, 2.36, and 7TeV
Journal of High Energy Physics, Vol. 2011, Núm. 1
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Charged-particle multiplicities in ppinteractions measured with the ATLAS detector at the LHC
New Journal of Physics, Vol. 13
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Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs
Semiconductor Science and Technology, Vol. 26, Núm. 9
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Compact optical instrument for simultaneous determination of oxygen and carbon dioxide
Microchimica Acta, Vol. 172, Núm. 3-4, pp. 455-464
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Conductance and application of organic molecule pairs as nanofuses
Physical Review B - Condensed Matter and Materials Physics, Vol. 83, Núm. 12
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Contact effects in compact models of organic thin film transistors: Application to zinc phthalocyanine-based transistors
Organic Electronics, Vol. 12, Núm. 5, pp. 832-842
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Dijet azimuthal decorrelations in pp collisions at √s=7TeV
Physical Review Letters, Vol. 106, Núm. 12
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First measurement of hadronic event shapes in pp collisions at s=7 TeV
Physics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics, Vol. 699, Núm. 1-2, pp. 48-67
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First measurement of the cross section for top-quark pair production in proton-proton collisions at √s=7 TeV
Physics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics, Vol. 695, Núm. 5, pp. 424-443
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Flexible ECG acquisition system based on analog and digital reconfigurable devices
Sensors and Actuators, A: Physical, Vol. 165, Núm. 2, pp. 261-270
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High doping density/high electric field, stress and heterojunction effects on the characteristics of CMOS compatible p-n junctions
Journal of the Electrochemical Society, Vol. 158, Núm. 5
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Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
Journal of Applied Physics, Vol. 110, Núm. 6
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Impact of Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions
IEEE Transactions on Electron Devices, Vol. 58, Núm. 8, pp. 2362-2370
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Impact of the fringing capacitance at the back of thin-film transistors
Organic Electronics, Vol. 12, Núm. 6, pp. 936-949
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In-depth study of quantum effects in SOI DGMOSFETs for different crystallographic orientations
IEEE Transactions on Electron Devices, Vol. 58, Núm. 12, pp. 4438-4441
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Inclusive b-hadron production cross section with muons in pp collisions at √s = 7 TeV
Journal of High Energy Physics, Vol. 2011, Núm. 3
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Inclusive search for same-sign dilepton signatures in pp collisions at √s = 7 TeV with the ATLAS detector
Journal of High Energy Physics, Vol. 2011, Núm. 10, pp. 1-47