ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES

2018

1. A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO 2 /Si RRAMs

   Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

2. MSDRAM, A2RAM and Z 2 -FET performance benchmark for 1T-DRAM applications

   International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

3. 3D multi-subband ensemble Monte Carlo simulation of 〈100〉 and 〈110〉 Si nanowire FETs

   2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

4. Advantages of gallium nitride over silicon transistors in soft-switched resonant switched capacitor converters

   CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems

5. An electroacoustical testbench: Characterizing an audio line

   Proceedings of 2018 Technologies Applied to Electronics Teaching, TAEE 2018

6. An electroacoustical testbench: characterizing an audio line

   Tecnología, Aprendizaje y Enseñanza de la Electrónica: TAEE 2018 : Actas del XIII Congreso de Tecnología, Aprendizaje y Enseñanza de la Electrónica, Tenerife, 20-22 de junio, 2018

7. Computationally efficient analytic charge model for III-V cylindrical nanowire transistors

   2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

8. Constrained Many-Objective Evolutionary Extraction Procedure for an OTFT Compact Model Including Contact Effects

   Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

9. Efficient Mobility Calculation for Quantum Dot Superlattices

   Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

10. Efficient Two-Band based Non-Equilibrium Green's Function Scheme for Modeling Tunneling Nano-Devices

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

11. Efficient Two-Band based Non-Equilibrium Green's Function Scheme for Modeling Tunneling Nano-Devices

    2018 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2018)

12. Evaluation of thin-oxide Z2-FET DRAM cell

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

13. Exploring resistive switching-based memristors in the charge–flux domain: A modeling approach

    International Journal of Circuit Theory and Applications

14. Gate-induced vs. implanted body doping impact on Z2-FET DC operation

    2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017

15. Impact of Strain on S/D tunneling in FinFETs: A MS-EMC study

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

16. Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study

    2018 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2018)

17. Impact of electron effective mass variation on the performance of InAs/GaSb Electron-Hole Bilayer Tunneling Field-Effect Transistor

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

18. Impact of the Effective Mass on the Mobility in Si Nanowire Transistors

    2018 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2018)

19. Impact of the Effective Mass on the Mobility in Si Nanowire Transistors

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

20. Low cost TVAC Chamber for aerospace tests

    Proceedings of 2018 Technologies Applied to Electronics Teaching, TAEE 2018