DEPARTAMENTO
ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
Publicaciones (204) Publicaciones en las que ha participado algún/a investigador/a
2015
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Search for direct pair production of a chargino and a neutralino decaying to the 125 GeV Higgs boson in √ s = 8 TeV pp collisions with the ATLAS detector
European Physical Journal C, Vol. 75, Núm. 5
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A Preliminary Study of the Relation Between Back-Pain and Plantar-Pressure Evolution during Pregnancy
2015 37TH ANNUAL INTERNATIONAL CONFERENCE OF THE IEEE ENGINEERING IN MEDICINE AND BIOLOGY SOCIETY (EMBC)
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A SPICE compact model for unipolar RRAM reset process analysis
IEEE Transactions on Electron Devices, Vol. 62, Núm. 3, pp. 955-962
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A Space weather information service based upon remote and in-situ measurements of coronal mass ejections heading for Earth: A concept mission consisting of six spacecraft in a heliocentric orbit at 0.72 AU
Journal of Space Weather and Space Climate, Vol. 5
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A new explicit and analytical model for square Gate-All-Around MOSFETs with rounded corners
Solid-State Electronics, Vol. 111, pp. 180-187
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A preliminary study of the relation between back-pain and plantar-pressure evolution during pregnancy
Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS
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A printed capacitive-resistive double sensor for toluene and moisture sensing
Sensors and Actuators, B: Chemical, Vol. 210, pp. 542-549
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A search for high-mass resonances decaying to τ+τ− in pp collisions at √s =8 TeV with the ATLAS detector
Journal of High Energy Physics, Vol. 2015, Núm. 7
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ATLAS Run 1 searches for direct pair production of third-generation squarks at the Large Hadron Collider
European Physical Journal C, Vol. 75, Núm. 10
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Accuracy improvement of MOSFET dosimeters in case of variation in thermal parameters
IEEE Transactions on Nuclear Science, Vol. 62, Núm. 2, pp. 487-493
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Adaptative ECT system based on reconfigurable electronics
Measurement: Journal of the International Measurement Confederation, Vol. 74, pp. 238-245
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An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
Solid-State Electronics, Vol. 111, pp. 47-51
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An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors
Mathematics and Computers in Simulation, Vol. 118, pp. 248-257
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Analysis of events with b-jets and a pair of leptons of the same charge in pp collisions at √s=8 TeV with the ATLAS detector
Journal of High Energy Physics, Vol. 2015, Núm. 10, pp. 1-51
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Analytic Potential and Charge Model of Semiconductor Quantum Wells
IEEE Transactions on Electron Devices, Vol. 62, Núm. 12, pp. 4186-4191
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Analytic drain current model for III-V cylindrical nanowire transistors
Journal of Applied Physics, Vol. 118, Núm. 4
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Analytical model for crosstalk in p-nwell photodiodes
IEEE Transactions on Electron Devices, Vol. 62, Núm. 2, pp. 580-586
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Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor
Applied Physics Letters, Vol. 106, Núm. 26
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Back-gate effects and detailed characterization of junctionless transistor
European Solid-State Device Research Conference
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Back-gate effects and detailed characterization of junctionless transistor
ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE