Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
ISSN: 0021-8979
Année de publication: 2003
Volumen: 94
Número: 9
Pages: 5732-5741
Type: Article
ISSN: 0021-8979
Année de publication: 2003
Volumen: 94
Número: 9
Pages: 5732-5741
Type: Article