Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration

  1. Gámiz, F.
  2. Roldán, J.B.
  3. Godoy, A.
  4. Cartujo-Cassinello, P.
  5. Carceller, J.E.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2003

Volumen: 94

Número: 9

Pages: 5732-5741

Type: Article

DOI: 10.1063/1.1615706 GOOGLE SCHOLAR