Strained-Si on Si1-xGex MOSFET mobility model

  1. Roldán, J.B.
  2. Gámiz, F.
  3. Cartujo-Cassinello, P.
  4. Cartujo, P.
  5. Carceller, J.E.
  6. Roldan, A.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2003

Volume: 50

Issue: 5

Pages: 1408-1411

Type: Article

DOI: 10.1109/TED.2003.813471 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus