Analytical gate capacitance modeling of III-V nanowire transistors

  1. Marin, E.G.
  2. Ruiz, F.J.G.
  3. Tienda-Luna, I.M.
  4. Godoy, A.
  5. Gámiz, F.
Revue:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Année de publication: 2013

Volumen: 60

Número: 5

Pages: 1590-1599

Type: Article

DOI: 10.1109/TED.2013.2250288 GOOGLE SCHOLAR
La source de données: Scopus