The quantization impact of accumulated carriers in silicide-gated MOSFETs

  1. Rodriguez, N.
  2. Gamiz, F.
  3. Clerc, R.
  4. Ghibaudo, G.
  5. Cristoloveanu, S.
Revue:
IEEE Electron Device Letters

ISSN: 0741-3106

Année de publication: 2008

Volumen: 29

Número: 6

Pages: 628-631

Type: Article

DOI: 10.1109/LED.2008.921209 GOOGLE SCHOLAR
La source de données: Scopus