Modeling of inversion layer centroid and polysilicon depletion effects on ultrathin-gate-oxide mOSFET behavior: The influence of crystallographic orientation

  1. Rodriguez, N.
  2. Gámiz, F.
  3. Roldán, J.B.
Aldizkaria:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Argitalpen urtea: 2007

Alea: 54

Zenbakia: 4

Orrialdeak: 723-732

Mota: Artikulua

DOI: 10.1109/TED.2007.891854 GOOGLE SCHOLAR
Datuen iturria: Scopus