Modeling of inversion layer centroid and polysilicon depletion effects on ultrathin-gate-oxide mOSFET behavior: The influence of crystallographic orientation

  1. Rodriguez, N.
  2. Gámiz, F.
  3. Roldán, J.B.
Revue:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Année de publication: 2007

Volumen: 54

Número: 4

Pages: 723-732

Type: Article

DOI: 10.1109/TED.2007.891854 GOOGLE SCHOLAR
La source de données: Scopus