A comprehensive study of velocity overshoot effects in double gate silicon on insulator transistors

  1. Gámiz, F.
Journal:
Semiconductor Science and Technology

ISSN: 0268-1242

Year of publication: 2004

Volume: 19

Issue: 3

Pages: 393-398

Type: Article

DOI: 10.1088/0268-1242/19/3/017 GOOGLE SCHOLAR
Data source: Scopus