A comprehensive study of velocity overshoot effects in double gate silicon on insulator transistors

  1. Gámiz, F.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242

Année de publication: 2004

Volumen: 19

Número: 3

Pages: 393-398

Type: Article

DOI: 10.1088/0268-1242/19/3/017 GOOGLE SCHOLAR
La source de données: Scopus