Accurate calculation of gate tunneling current in double-gate and single-gate SOI MOSFETs through gate dielectric stacks

  1. Chaves, F.A.
  2. Jiménez, D.
  3. García Ruiz, F.J.
  4. Godoy, A.
  5. Suñé, J.
Aldizkaria:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Argitalpen urtea: 2012

Alea: 59

Zenbakia: 10

Orrialdeak: 2589-2596

Mota: Artikulua

DOI: 10.1109/TED.2012.2206597 GOOGLE SCHOLAR
Datuen iturria: Scopus