Accurate calculation of gate tunneling current in double-gate and single-gate SOI MOSFETs through gate dielectric stacks

  1. Chaves, F.A.
  2. Jiménez, D.
  3. García Ruiz, F.J.
  4. Godoy, A.
  5. Suñé, J.
Revue:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Année de publication: 2012

Volumen: 59

Número: 10

Pages: 2589-2596

Type: Article

DOI: 10.1109/TED.2012.2206597 GOOGLE SCHOLAR
La source de données: Scopus