A New Holistic Model of 2-D Semiconductor FETs

  1. Marin, E.G.
  2. Bader, S.J.
  3. Jena, D.
Revue:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Année de publication: 2018

Volumen: 65

Número: 3

Pages: 1239-1245

Type: Article

DOI: 10.1109/TED.2018.2797172 GOOGLE SCHOLAR lock_openAccès ouvert editor
La source de données: Scopus