Publicaciones en las que colabora con CARLOS SAMPEDRO MATARÍN (74)

2023

  1. 3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology

    Solid-State Electronics, Vol. 200

  2. Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Simulation of BioGFET sensors using TCAD

    Solid-State Electronics, Vol. 208

2022

  1. Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator

    Micromachines, Vol. 13, Núm. 4

  2. Performance of FDSOI double-gate dual-doped reconfigurable FETs

    Solid-State Electronics, Vol. 194

  3. Towards a DFT-based layered model for TCAD simulations of MoS2

    Solid-State Electronics, Vol. 197

2021

  1. Self-consistent enhanced s/d tunneling implementation in a 2d ms-emc nanodevice simulator

    Micromachines, Vol. 12, Núm. 6

2020

  1. Efficient Implementation of S/D tunneling in 2D MS-EMC of Nanoelectronic Devices including the Thickness Dependent Effective Mass

    2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020

  2. Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

  3. Quantum enhancement of a s/d tunneling model in a 2d ms-emc nanodevice simulator: NEGF comparison and impact of effective mass variation

    Micromachines, Vol. 11, Núm. 2

  4. Techniques for Statistical Enhancement in a 2D Multi-subband Ensemble Monte Carlo Nanodevice Simulator

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

2019

  1. A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations

    Solid-State Electronics, Vol. 159, pp. 19-25

  2. Capacitorless memory devices using virtual junctions

    19th International Workshop on Junction Technology, IWJT 2019

  3. Capacitorless memory devices using virtual junctions

    2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)

  4. Impact of effective mass on transport properties and direct source-to-drain tunneling in ultrascaled double gate devices: A 2D multi-subband ensemble monte carlo study

    2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019

  5. Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

  6. Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 3, pp. 1145-1152

  7. On the Low-Frequency Noise Characterization of Z2-FET Devices

    IEEE Access, Vol. 7, pp. 42551-42556

  8. This special issue is devoted to selected papers presented at the EuroSOI-ULIS2018 international conference, held in Granada, Spain on 19–21 March 2018

    Solid-State Electronics

2018

  1. 3D multi-subband ensemble Monte Carlo simulation of 〈100〉 and 〈110〉 Si nanowire FETs

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018