FÍSICA ESTADÍSTICA Y SISTEMAS COMPLEJOS
GRANADA-FESICO
STMicroelectronics
Ginebra, SuizaPublicaciones en colaboración con investigadores/as de STMicroelectronics (6)
2024
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Directly Cooled Silicon Carbide Power Module: Pin-Fins Roughness Effect on Pressure Drop
Lecture Notes in Mechanical Engineering
2019
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Capacitorless memory devices using virtual junctions
19th International Workshop on Junction Technology, IWJT 2019
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Capacitorless memory devices using virtual junctions
2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)
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On the Low-Frequency Noise Characterization of Z2-FET Devices
IEEE Access, Vol. 7, pp. 42551-42556
2013
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Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors
Journal of Applied Physics, Vol. 113, Núm. 14
2012
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Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET
European Solid-State Device Research Conference