Publikationen (166) Publikationen, an denen Forscher/innen teilgenommen haben

2024

  1. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

    Materials Science in Semiconductor Processing, Vol. 169

  2. Compact modeling of hysteresis in organic thin-film transistors

    Organic Electronics, Vol. 129

  3. Different PCA approaches for vector functional time series with applications to resistive switching processes

    Mathematics and Computers in Simulation, Vol. 223, pp. 288-298

  4. Faraday rotation and transmittance as markers of topological phase transitions in 2D materials

    SciPost Physics, Vol. 16, Núm. 3

  5. Hardware implementation of memristor-based artificial neural networks

    Nature Communications, Vol. 15, Núm. 1

  6. High-Temporal-Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h-BN Memristors

    Advanced Functional Materials, Vol. 34, Núm. 15

  7. Hysteresis in memristors produces conduction inductance and conduction capacitance effects

    Physical Chemistry Chemical Physics

  8. Instrumental color measurements of automotive samples with convex cylindrical curvatures under diffuse lighting

    Óptica pura y aplicada, Vol. 57, Núm. 1

  9. Non-uniform WENO-based quasi-interpolating splines from the Bernstein–Bézier representation and applications

    Mathematics and Computers in Simulation, Vol. 223, pp. 158-170

  10. Production of 165Er with deuterons at IFMIF-DONES

    Nuclear Materials and Energy, Vol. 39

  11. Spectral reflectance reconstruction based on wideband multi-illuminant imaging and a modified particle swarm optimization algorithm

    Optics Express, Vol. 32, Núm. 3, pp. 2942-2958

  12. Stochastic resonance in 2D materials based memristors

    npj 2D Materials and Applications, Vol. 8, Núm. 1

  13. Study of the production of radioisotopes at IFMIF-DONES: 177Lu with deuterons

    Radiation Physics and Chemistry, Vol. 220

  14. Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors

    ACS Applied Electronic Materials, Vol. 6, Núm. 2, pp. 1424-1433

  15. Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

    Materials Science in Semiconductor Processing, Vol. 179

2023

  1. 3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach

    Materials Horizons, Vol. 11, Núm. 4, pp. 949-957

  2. A Comparison of Resistive Switching Parameters for Memristive Devices with HfO2Mono Layers and Al2O3/HfO2Bilayers at the Wafer Scale

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  3. A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices

    Physica Status Solidi (A) Applications and Materials Science, Vol. 220, Núm. 11

  4. A comprehensive test of colour-difference formulae and uniform colour spaces using available visual datasets

    Color Research and Application, Vol. 48, Núm. 3, pp. 267-282

  5. An approach to non-homogenous phase-type distributions through multiple cut-points

    Quality Engineering, Vol. 35, Núm. 4, pp. 619-638