GRUPO DE INVESTIGACION EN DISPOSITIVOS ELECTRONICOS
GRIDE
Korea Institute of Science and Technology
Seúl, Corea del SurPublications en collaboration avec des chercheurs de Korea Institute of Science and Technology (8)
2019
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Characteristics of band modulation FET on sub 10 nm SOI
Japanese Journal of Applied Physics, Vol. 58, Núm. SB
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On the Low-Frequency Noise Characterization of Z2-FET Devices
IEEE Access, Vol. 7, pp. 42551-42556
2018
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A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
Solid-State Electronics, Vol. 143, pp. 10-19
2017
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Extended Analysis of the Z2-FET: Operation as Capacitorless eDRAM
IEEE Transactions on Electron Devices, Vol. 64, Núm. 11, pp. 4486-4491
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Ultra-low power 1T-DRAM in FDSOI technology
Microelectronic Engineering, Vol. 178, pp. 245-249
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Z2-FET as Capacitor-Less eDRAM Cell for High-Density Integration
IEEE Transactions on Electron Devices, Vol. 64, Núm. 12, pp. 4904-4909
2016
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Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory
2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016
2015
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Special memory mechanisms in SOI devices
ECS Transactions