GRUPO DE INVESTIGACION EN DISPOSITIVOS ELECTRONICOS
GRIDE
IBM Research – Thomas J. Watson Research Center
Yorktown Heights, Estados UnidosPublikationen in Zusammenarbeit mit Forschern von IBM Research – Thomas J. Watson Research Center (3)
2003
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Remote Coulomb scattering in metal-oxide-semiconductor field effect transistors: Screening by electrons in the gate
Applied Physics Letters, Vol. 83, Núm. 23, pp. 4848-4850
2002
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On the enhanced electron mobility in strained-silicon inversion layers
Journal of Applied Physics, Vol. 92, Núm. 12, pp. 7320-7324
2001
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Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion
Journal of Applied Physics, Vol. 89, Núm. 10, pp. 5478-5487