Korea Institute of Science and Technology-ko ikertzaileekin lankidetzan egindako argitalpenak (8)

2019

  1. Characteristics of band modulation FET on sub 10 nm SOI

    Japanese Journal of Applied Physics, Vol. 58, Núm. SB

  2. On the Low-Frequency Noise Characterization of Z2-FET Devices

    IEEE Access, Vol. 7, pp. 42551-42556

2018

  1. A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters

    Solid-State Electronics, Vol. 143, pp. 10-19

2017

  1. Extended Analysis of the Z2-FET: Operation as Capacitorless eDRAM

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 11, pp. 4486-4491

  2. Ultra-low power 1T-DRAM in FDSOI technology

    Microelectronic Engineering, Vol. 178, pp. 245-249

  3. Z2-FET as Capacitor-Less eDRAM Cell for High-Density Integration

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 12, pp. 4904-4909

2016

  1. Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory

    2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016

2015

  1. Special memory mechanisms in SOI devices

    ECS Transactions