GRUPO DE INVESTIGACIÓN EN NANOELECTRÓNICA
NRG
University of Glasgow
Glasgow, Reino UnidoPublikationen in Zusammenarbeit mit Forschern von University of Glasgow (35)
2021
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Self-consistent enhanced s/d tunneling implementation in a 2d ms-emc nanodevice simulator
Micromachines, Vol. 12, Núm. 6
2020
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Efficient Implementation of S/D tunneling in 2D MS-EMC of Nanoelectronic Devices including the Thickness Dependent Effective Mass
2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020
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Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
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Quantum enhancement of a s/d tunneling model in a 2d ms-emc nanodevice simulator: NEGF comparison and impact of effective mass variation
Micromachines, Vol. 11, Núm. 2
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Techniques for Statistical Enhancement in a 2D Multi-subband Ensemble Monte Carlo Nanodevice Simulator
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
2019
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Impact of effective mass on transport properties and direct source-to-drain tunneling in ultrascaled double gate devices: A 2D multi-subband ensemble monte carlo study
2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019
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Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
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Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices
IEEE Transactions on Electron Devices, Vol. 66, Núm. 3, pp. 1145-1152
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Thorough Understanding of Retention Time of Z2FET Memory Operation
IEEE Transactions on Electron Devices, Vol. 66, Núm. 1, pp. 383-388
2018
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A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
Solid-State Electronics, Vol. 143, pp. 10-19
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Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor
Applied Physics Letters, Vol. 112, Núm. 18
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Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
IEEE Transactions on Electron Devices, Vol. 65, Núm. 10, pp. 4679-4686
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Impact of Strain on S/D tunneling in FinFETs: A MS-EMC study
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study
2018 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2018)
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Impact of electron effective mass variation on the performance of InAs/GaSb Electron-Hole Bilayer Tunneling Field-Effect Transistor
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
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MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
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Simulation study on Z2FET scalability, process optimization and their impact on performance
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
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Source-to-drain tunneling analysis in FDSOI, DGSOI, and FinFET devices by means of multisubband ensemble Monte Carlo
IEEE Transactions on Electron Devices, Vol. 65, Núm. 11, pp. 4740-4746
2017
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2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application
2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)
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2D-TCAD simulation on retention time of Z2FET for DRAM application
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD